(Ba,K) F(Zn,Mn) As: 自旋及载流子分别调控型稀磁半导体材料
（New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K) F(Zn,Mn) As with Independent Spin and Charge Doping）
B. J. Chen, Z. Deng, W. M. Li, M. R. Gao, Q. Q. Liu, C. Z. Gu, F. X. Hu, B. G. Shen, B. Frandsen, S. Cheung, L. Lian, Y. J. Uemura, C. Ding, S. L. Guo, F. L. Ning, T. J. S. Munsie, M. N. Wilson, Y. P. Cai, G. Luke, Z. Guguchia, S. Yonezawa, Z. Li and C. Q. Jin
Sci. Rep., 6, 36578 (2016)
We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.