新型稀磁半导体居里温度突破230K

 (Ferromagnetism at 230 K in (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 diluted magnetic semiconductor）

K. Zhao, B.J. Chen, G.Q. Zhao, Z. Yuan, Q.Q. Liu, Z. Deng, J.L. Zhu, C.Q. Jin

Chin. Sci. Bull. 59, 2524 (2014)
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　　We report the ferromagnetism with Cure temperature Tc at 230 K in a new diluted magnetic semiconductor (DMS) (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering. Spin is doped by isovalence substitution of Mn2+ for Zn2+, while charge is introduced by heterovalence substitution of K+ for Ba2+ in (Ba0.7K0.3) (Zn0.85Mn0.15)2As2 DMS, being different from (Ga,Mn)As where both spin & charge are induced simultaneously by heterovalence substation of Mn2+ for Ga3+. The (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 DMS shows spontaneous magnetization following T3/2 dependence expected for a homogeneous ferromagnet with saturation moment 1.0lB for each Mn atom.