新型稀磁半导体居里温度突破230K

 (Ferromagnetism at 230 K in (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 diluted magnetic semiconductor

K. Zhao, B.J. Chen, G.Q. Zhao, Z. Yuan, Q.Q. Liu, Z. Deng, J.L. Zhu, C.Q. Jin

Chin. Sci. Bull. 59, 2524 (2014)
入选美国科学促进会主办的“EurekAlert! Science News

  We report the ferromagnetism with Cure temperature Tc at 230 K in a new diluted magnetic semiconductor (DMS) (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering. Spin is doped by isovalence substitution of Mn2+ for Zn2+, while charge is introduced by heterovalence substitution of K+ for Ba2+ in (Ba0.7K0.3) (Zn0.85Mn0.15)2As2 DMS, being different from (Ga,Mn)As where both spin & charge are induced simultaneously by heterovalence substation of Mn2+ for Ga3+. The (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 DMS shows spontaneous magnetization following T3/2 dependence expected for a homogeneous ferromagnet with saturation moment 1.0lB for each Mn atom.